| PART |
Description |
Maker |
| R1LV0816ASD-5SI R1LV0816ASD-7SI |
8Mb Advanced LPSRAM (512k word x 16bit / 1M word x 8bit)
|
Renesas Electronics Corporation
|
| R1WV6416RSD-5SI R1WV6416RSD-5SR R1WV6416RSD-7SI R1 |
64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
|
http://
Renesas Electronics Corporation
|
| R1LV5256ESP-5SI-S0 R1LV5256ESP-5SI-B0 R1LV5256ESP- |
256Kb Advanced LPSRAM (32k word x 8bit)
|
Renesas Electronics Corporation
|
| GS881Z18AT-133 GS881Z18AT-133I GS881Z18AT-150 GS88 |
133MHz 8.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
150MHz 7.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
166MHz 7ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
200MHz 6.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
225MHz 6ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
250MHz 5.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
| GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I |
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 14 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
|
GSI Technology, Inc.
Molex, Inc.
|
| IBM0418A8ACLAB IBM0436A4ACLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM)
4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的（128K的36）的SRAMMb的（128K的36）寄存器锁存模式的同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| GS78116B-10 GS78116B-10I GS78116B-12I GS78116B-15 |
512K x 16 8Mb Asynchronous SRAM
|
GSI Technology
|
| N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
|
ON Semiconductor
|
| MT58L256L36F |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
| MT58L256L36P MT58L256L32P MT58L256V32P MT58L256V36 |
8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM
|
Micron Technology
|
